Lateral black phosphorene P–N junctions formed via chemical doping for high performance near-infrared photodetector

• المؤلفون الرئيسيون: Zhang, Shengli, Zeng, Haibo, Wang, Qi Jie, Yu, Xuechao
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Solar cells; Few-layer black phosphorene; Chemical doping; P–N junction; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/80381; http://hdl.handle.net/10220/40502

Black phosphorene (BP), a newly discovered elemental two-dimensional material, is attractive for optoelectronic and photonic applications because of its unique in-plane anisotropy, thickness-dependent direct bandgap and high carrier mobility. Since its discovery, black phosphorene has become an appe...