Spin-valve-like magnetoresistance in a Ni-Mn-In thin film

• Main Authors: Agarwal, Sandeep, Wang, Baomin, Yang, Huali, Dhanapal, Pravarthana, Shen, Yuan, Wang, Junling, Wang, Hailong, Zhao, Jianhua, Li, Run-Wei
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Spin Valve; Magnetoresistance; DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/80474; http://hdl.handle.net/10220/46566
• Institution: Nanyang Technological University

Spin valve devices, the resistive state of which is controlled by switching the magnetization of a free ferromagnetic layer with respect to a pinned ferromagnetic layer, rely on the scattering of electrons within the active medium to work. Here we demonstrate spin-valve-like effect in the Ni-Mn-In t...