Direct preparation of carbon nanotube intramolecular junctions on structured substrates

Leveraging the unique properties of single-walled carbon nanotube (SWNT) intramolecular junctions (IMJs) in innovative nanodevices and next-generation nanoelectronics requires controllable, repeatable, and large-scale preparation, together with rapid identification and comprehensive characterization...

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Bibliographic Details
Main Authors: An, Jianing, Zhan, Zhaoyao, Sun, Gengzhi, Mohan, Hari Krishna Salila Vijayalal, Zhou, Jinyuan, Kim, Young-Jin, Zheng, Lianxi
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Online Access:https://hdl.handle.net/10356/80808
http://hdl.handle.net/10220/46600
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Institution: Nanyang Technological University
Language: English
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Summary:Leveraging the unique properties of single-walled carbon nanotube (SWNT) intramolecular junctions (IMJs) in innovative nanodevices and next-generation nanoelectronics requires controllable, repeatable, and large-scale preparation, together with rapid identification and comprehensive characterization of such structures. Here we demonstrate SWNT IMJs through directly growing ultralong SWNTs on trenched substrates. It is found that the trench configurations introduce axial strain in partially suspended nanotubes, and promote bending deformation in the vicinity of the trench edges. As a result, the lattice and electronic structure of the nanotubes can be locally modified, to form IMJs in the deformation regions. The trench patterns also enable pre-defining the formation locations of SWNT IMJs, facilitating the rapid identification. Elaborate Raman characterization has verified the formation of SWNT IMJs and identified their types. Rectifying behavior has been observed by electrical measurements on the as-prepared semiconducting-semiconducting (S-S) junction.