MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation

High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-on...

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Main Authors: Wu, Dan, Tang, Xiaohong, Yoon, Ho Sup, Wang, Kai, Olivier, Aurelien, Li, Xianqiang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2015
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Online Access:https://hdl.handle.net/10356/81083
http://hdl.handle.net/10220/39108
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-810832023-02-28T16:58:11Z MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation Wu, Dan Tang, Xiaohong Yoon, Ho Sup Wang, Kai Olivier, Aurelien Li, Xianqiang School of Electrical and Electronic Engineering School of Biological Sciences GaAs nanowires Indium tin oxide Centrifugation MOCVD High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-only method, high-area density Au NPs were uniformly distributed on ITO. Tunable area density was realized through variation of the centrifugation time, and the highest area densities were obtained as high as 490 and 120 NP/μm 2 for 10- and 20-nm diameters of Au NPs, respectively. Based on the vapor–liquid–solid growth mechanism, the growth rates of GaAs NWs at 430 °C were 18.2 and 21.5 nm/s for the highest area density obtained of 10- and 20-nm Au NP-catalyzed NWs. The growth rate of the GaAs NWs was reduced with the increase of the NW density due to the competition of precursor materials. High crystal quality of the NWs was also obtained with no observable planar defects. 10-nm Au NP-induced NWs exhibit wurtzite structure whereas zinc-blende is observed for 20-nm NW samples. Controllable density and high crystal quality of the GaAs NWs on ITO demonstrate their potential application in hybrid a solar cell. MOE (Min. of Education, S’pore) Published version 2015-12-16T09:15:50Z 2019-12-06T14:21:03Z 2015-12-16T09:15:50Z 2019-12-06T14:21:03Z 2015 Journal Article Wu, D., Tang, X., Yoon, H. S., Wang, K., Olivier, A., & Li, X. (2015). MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation. Nanoscale Research Letters, 10, 410-. 1931-7573 https://hdl.handle.net/10356/81083 http://hdl.handle.net/10220/39108 10.1186/s11671-015-1121-y 26487507 en Nanoscale Research Letters © 2015 Wu et al. Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. 6 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic GaAs nanowires
Indium tin oxide
Centrifugation
MOCVD
spellingShingle GaAs nanowires
Indium tin oxide
Centrifugation
MOCVD
Wu, Dan
Tang, Xiaohong
Yoon, Ho Sup
Wang, Kai
Olivier, Aurelien
Li, Xianqiang
MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
description High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-only method, high-area density Au NPs were uniformly distributed on ITO. Tunable area density was realized through variation of the centrifugation time, and the highest area densities were obtained as high as 490 and 120 NP/μm 2 for 10- and 20-nm diameters of Au NPs, respectively. Based on the vapor–liquid–solid growth mechanism, the growth rates of GaAs NWs at 430 °C were 18.2 and 21.5 nm/s for the highest area density obtained of 10- and 20-nm Au NP-catalyzed NWs. The growth rate of the GaAs NWs was reduced with the increase of the NW density due to the competition of precursor materials. High crystal quality of the NWs was also obtained with no observable planar defects. 10-nm Au NP-induced NWs exhibit wurtzite structure whereas zinc-blende is observed for 20-nm NW samples. Controllable density and high crystal quality of the GaAs NWs on ITO demonstrate their potential application in hybrid a solar cell.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wu, Dan
Tang, Xiaohong
Yoon, Ho Sup
Wang, Kai
Olivier, Aurelien
Li, Xianqiang
format Article
author Wu, Dan
Tang, Xiaohong
Yoon, Ho Sup
Wang, Kai
Olivier, Aurelien
Li, Xianqiang
author_sort Wu, Dan
title MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
title_short MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
title_full MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
title_fullStr MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
title_full_unstemmed MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
title_sort mocvd growth of high-quality and density-tunable gaas nanowires on ito catalyzed by au nanoparticles deposited by centrifugation
publishDate 2015
url https://hdl.handle.net/10356/81083
http://hdl.handle.net/10220/39108
_version_ 1759855262994268160