MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation

• المؤلفون الرئيسيون: Wu, Dan, Tang, Xiaohong, Yoon, Ho Sup, Wang, Kai, Olivier, Aurelien, Li, Xianqiang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: GaAs nanowires; Indium tin oxide; Centrifugation; MOCVD
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81083; http://hdl.handle.net/10220/39108
• المؤسسة: Nanyang Technological University

High-quality and density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition (MOCVD). Au catalysts were deposited on ITO glass substrate using a centrifugal method. Compared with the droplet-on...