A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments

We present the design, construction, and testing of a straining device compatible with many different synchrotron radiation techniques, in a wide range of experimental environments (including low temperature, high field and ultra-high vacuum). The device has been tested by X-ray diffraction on singl...

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Main Authors: Gannon, L., Bosak, A., Burkovsky, R. G., Nisbet, G., Hoesch, M., Petrović, Alexander Paul
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2015
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Online Access:https://hdl.handle.net/10356/81189
http://hdl.handle.net/10220/39158
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-811892023-02-28T19:30:33Z A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments Gannon, L. Bosak, A. Burkovsky, R. G. Nisbet, G. Hoesch, M. Petrović, Alexander Paul School of Physical and Mathematical Sciences Physics and Applied Physics We present the design, construction, and testing of a straining device compatible with many different synchrotron radiation techniques, in a wide range of experimental environments (including low temperature, high field and ultra-high vacuum). The device has been tested by X-ray diffraction on single crystal samples of quasi-one-dimensional Cs2Mo6Se6 and K2Mo6Se6, in which microscopic strains up to a Δc/c = 0.12% ± 0.01% change in the c lattice parameters have been achieved. We have also used the device in an inelastic X-ray scattering experiment, to probe the strain-dependent speed of sound ν along the c axis. A reduction Δν/ν of up to −3.8% was obtained at a strain of Δc/c = 0.25% in K2Mo6Se6. Published version 2015-12-18T04:28:12Z 2019-12-06T14:23:16Z 2015-12-18T04:28:12Z 2019-12-06T14:23:16Z 2015 Journal Article Gannon, L., Bosak, A., Burkovsky, R. G., Nisbet, G., Petrović, A. P., & Hoesch, M. (2015). A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments. Review of Scientific Instruments, 86(10), 103904-. 0034-6748 https://hdl.handle.net/10356/81189 http://hdl.handle.net/10220/39158 10.1063/1.4933383 en Review of Scientific Instruments © 2015 AIP Publishing LLC. This paper was published in Review of Scientific Instruments and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4933383]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 7 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Physics and Applied Physics
spellingShingle Physics and Applied Physics
Gannon, L.
Bosak, A.
Burkovsky, R. G.
Nisbet, G.
Hoesch, M.
Petrović, Alexander Paul
A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments
description We present the design, construction, and testing of a straining device compatible with many different synchrotron radiation techniques, in a wide range of experimental environments (including low temperature, high field and ultra-high vacuum). The device has been tested by X-ray diffraction on single crystal samples of quasi-one-dimensional Cs2Mo6Se6 and K2Mo6Se6, in which microscopic strains up to a Δc/c = 0.12% ± 0.01% change in the c lattice parameters have been achieved. We have also used the device in an inelastic X-ray scattering experiment, to probe the strain-dependent speed of sound ν along the c axis. A reduction Δν/ν of up to −3.8% was obtained at a strain of Δc/c = 0.25% in K2Mo6Se6.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Gannon, L.
Bosak, A.
Burkovsky, R. G.
Nisbet, G.
Hoesch, M.
Petrović, Alexander Paul
format Article
author Gannon, L.
Bosak, A.
Burkovsky, R. G.
Nisbet, G.
Hoesch, M.
Petrović, Alexander Paul
author_sort Gannon, L.
title A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments
title_short A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments
title_full A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments
title_fullStr A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments
title_full_unstemmed A device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments
title_sort device for the application of uniaxial strain to single crystal samples for use in synchrotron radiation experiments
publishDate 2015
url https://hdl.handle.net/10356/81189
http://hdl.handle.net/10220/39158
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