Thickness-Induced Metal-Insulator Transition in Sb-doped SnO2 Ultrathin Films: The Role of Quantum Confinement

• المؤلفون الرئيسيون: Ke, Chang, Zhu, Weiguang, Zhang, Zheng, Tok, Eng Soon, Ling, Bo, Pan, Jisheng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: Thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81209; http://hdl.handle.net/10220/39143

A thickness induced metal-insulator transition (MIT) was firstly observed in Sb-doped SnO2 (SnO2:Sb) epitaxial ultrathin films deposited on sapphire substrates by pulsed laser deposition. Both electrical and spectroscopic studies provide clear evidence of a critical thickness for the metallic condu...