Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

• المؤلفون الرئيسيون: Wang, Xiaoshan, Wang, Zhiwei, Zhang, Jindong, Wang, Xiang, Zhang, Zhipeng, Wang, Jialiang, Zhu, Zhaohua, Li, Zhuoyao, Liu, Yao, Hu, Xuefeng, Qiu, Junwen, Hu, Guohua, Chen, Bo, Wang, Ning, He, Qiyuan, Chen, Junze, Yan, Jiaxu, Zhang, Wei, Hasan, Tawfique, Li, Shaozhou, Li, Hai, Zhang, Hua, Wang, Qiang, Huang, Xiao, Huang, Wei
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: DRNTU::Engineering::Materials; Metal Semiconductor Heterostructures; Solution Phase Epitaxy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81389; http://hdl.handle.net/10220/47481
• المؤسسة: Nanyang Technological University

The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phas...