Ferroelectric BiFeO3 thin-film optical modulators

High quality epitaxial BiFeO3 (BFO) thin films have been grown on (001) SrTiO3 substrate by magnetron sputtering. Both a-axis and c-axis BFO orientations were studied. Prism coupler results reveal that the c-axis and a-axis refractive indices of the BFO thin films were 2.721 and 2.653 at 632.8 nm; t...

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Main Authors: Zhu, Minmin, Du, Zehui, Liu, Qing, Chen, Bensong, Tsang, Siu Hon, Teo, Edwin Hang Tong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
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Online Access:https://hdl.handle.net/10356/81460
http://hdl.handle.net/10220/40855
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-814602020-03-07T13:56:09Z Ferroelectric BiFeO3 thin-film optical modulators Zhu, Minmin Du, Zehui Liu, Qing Chen, Bensong Tsang, Siu Hon Teo, Edwin Hang Tong School of Electrical and Electronic Engineering Centre for Micro-/Nano-electronics (NOVITAS) Ferroelectric thin films Thin film structure High quality epitaxial BiFeO3 (BFO) thin films have been grown on (001) SrTiO3 substrate by magnetron sputtering. Both a-axis and c-axis BFO orientations were studied. Prism coupler results reveal that the c-axis and a-axis refractive indices of the BFO thin films were 2.721 and 2.653 at 632.8 nm; the corresponding propagation losses were 4.3 and 4.6 dB/cm, respectively. An electro-optic modulator (EO) modulator based on such BFO film has been demonstrated with a fast switching time t=3.8us at 632.8 nm for the a-axis orientation and t=3.4us for c-axis orientation. Moreover, these BFO films gave the Pockels coefficient r eff=19.3pm/V for the c-axis orientation and r eff=15.9 pm/V for the a-axis orientation at 632.8nm. Such an anisotropic refractive index and linear EO behaviors are attributed to the epitaxial strain and stripe domain structure in the BFO thin films with mixed phases. This study illustrates the suitability of the BFO thin films for EO modulators and optical switches beyond their current extensive spintronic and memory applications. Published version 2016-06-30T07:50:56Z 2019-12-06T14:31:30Z 2016-06-30T07:50:56Z 2019-12-06T14:31:30Z 2016 Journal Article Zhu, M., Du, Z., Liu, Q., Chen, B., Tsang, S. H., & Teo, E. H. T. (2016). Ferroelectric BiFeO3 thin-film optical modulators. Applied Physics Letters, 108(23), 233502-. 0003-6951 https://hdl.handle.net/10356/81460 http://hdl.handle.net/10220/40855 10.1063/1.4953201 en Applied Physics Letters © 2016 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The published version is available at: [http://dx.doi.org/10.1063/1.4953201]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Ferroelectric thin films
Thin film structure
spellingShingle Ferroelectric thin films
Thin film structure
Zhu, Minmin
Du, Zehui
Liu, Qing
Chen, Bensong
Tsang, Siu Hon
Teo, Edwin Hang Tong
Ferroelectric BiFeO3 thin-film optical modulators
description High quality epitaxial BiFeO3 (BFO) thin films have been grown on (001) SrTiO3 substrate by magnetron sputtering. Both a-axis and c-axis BFO orientations were studied. Prism coupler results reveal that the c-axis and a-axis refractive indices of the BFO thin films were 2.721 and 2.653 at 632.8 nm; the corresponding propagation losses were 4.3 and 4.6 dB/cm, respectively. An electro-optic modulator (EO) modulator based on such BFO film has been demonstrated with a fast switching time t=3.8us at 632.8 nm for the a-axis orientation and t=3.4us for c-axis orientation. Moreover, these BFO films gave the Pockels coefficient r eff=19.3pm/V for the c-axis orientation and r eff=15.9 pm/V for the a-axis orientation at 632.8nm. Such an anisotropic refractive index and linear EO behaviors are attributed to the epitaxial strain and stripe domain structure in the BFO thin films with mixed phases. This study illustrates the suitability of the BFO thin films for EO modulators and optical switches beyond their current extensive spintronic and memory applications.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhu, Minmin
Du, Zehui
Liu, Qing
Chen, Bensong
Tsang, Siu Hon
Teo, Edwin Hang Tong
format Article
author Zhu, Minmin
Du, Zehui
Liu, Qing
Chen, Bensong
Tsang, Siu Hon
Teo, Edwin Hang Tong
author_sort Zhu, Minmin
title Ferroelectric BiFeO3 thin-film optical modulators
title_short Ferroelectric BiFeO3 thin-film optical modulators
title_full Ferroelectric BiFeO3 thin-film optical modulators
title_fullStr Ferroelectric BiFeO3 thin-film optical modulators
title_full_unstemmed Ferroelectric BiFeO3 thin-film optical modulators
title_sort ferroelectric bifeo3 thin-film optical modulators
publishDate 2016
url https://hdl.handle.net/10356/81460
http://hdl.handle.net/10220/40855
_version_ 1681034793497657344