Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy

• المؤلفون الرئيسيون: Ye, Gang, Wang, Hong, Ji, Rong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: III-V semiconductors; X-ray photoelectron spectroscopy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81515; http://hdl.handle.net/10220/40837
• المؤسسة: Nanyang Technological University

The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy(XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlNsurface. Based on the angle-r...