Band alignment of HfO2/AlN heterojunction investigated by X-ray photoelectron spectroscopy
The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO2 was determined by X-ray photoelectron spectroscopy(XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlNsurface. Based on the angle-r...
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| Main Authors: | , , |
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| 格式: | Article |
| 語言: | English |
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2016
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| 在線閱讀: | https://hdl.handle.net/10356/81515 http://hdl.handle.net/10220/40837 |
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| 機構: | Nanyang Technological University |
| 語言: | English |