Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator

Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper,...

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Main Authors: Bai, Ping, Chu, Hong Son, Ang, L. K., Ooi, Kelvin J. A.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
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Online Access:https://hdl.handle.net/10356/81719
http://hdl.handle.net/10220/39642
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-817192020-03-07T13:57:25Z Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator Bai, Ping Chu, Hong Son Ang, L. K. Ooi, Kelvin J. A. School of Electrical and Electronic Engineering Dual-mode Plasmonics Ultracompact Vanadium dioxide Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator using a metal-insulator-VO2-insulator-metal (MIVIM) waveguide platform. By varying the index of vanadium dioxide, the modulator can route plasmonic waves through the low-loss dielectric insulator layer during the “on” state and high-loss VO2 layer during the “off” state, thereby significantly reducing the insertion loss while maintaining a large modulation depth. This ultracompact waveguide modulator, for example, can achieve a large modulation depth of ~10 dB with an active size of only 200×50×220 nm3 (or ~λ3/1700), requiring a drive-voltage of ~4.6 V. This high performance plasmonic modulator could potentially be one of the keys towards fully-integrated plasmonic nanocircuits in the next-generation chip technology. ASTAR (Agency for Sci., Tech. and Research, S’pore) Published version 2016-01-11T03:04:10Z 2019-12-06T14:39:05Z 2016-01-11T03:04:10Z 2019-12-06T14:39:05Z 2013 Journal Article Ooi, K. J. A., Bai, P., Chu, H. S., & Ang, L. K. (2013). Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator. Nanophotonics, 2(1), 13-19. 2192-8614 https://hdl.handle.net/10356/81719 http://hdl.handle.net/10220/39642 10.1515/nanoph-2012-0028 en Nanophotonics © 2013 Science Wise Publishing & De Gruyter. This paper was published in Nanophotonics and is made available as an electronic reprint (preprint) with permission of Science Wise Publishing & De Gruyter. The published version is available at: [http://dx.doi.org/10.1515/nanoph-2012-0028]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 7 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Dual-mode
Plasmonics
Ultracompact
Vanadium dioxide
spellingShingle Dual-mode
Plasmonics
Ultracompact
Vanadium dioxide
Bai, Ping
Chu, Hong Son
Ang, L. K.
Ooi, Kelvin J. A.
Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator
description Subwavelength modulators play an indispensable role in integrated photonic-electronic circuits. Due to weak light-matter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. In this paper, we propose the design of a vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator using a metal-insulator-VO2-insulator-metal (MIVIM) waveguide platform. By varying the index of vanadium dioxide, the modulator can route plasmonic waves through the low-loss dielectric insulator layer during the “on” state and high-loss VO2 layer during the “off” state, thereby significantly reducing the insertion loss while maintaining a large modulation depth. This ultracompact waveguide modulator, for example, can achieve a large modulation depth of ~10 dB with an active size of only 200×50×220 nm3 (or ~λ3/1700), requiring a drive-voltage of ~4.6 V. This high performance plasmonic modulator could potentially be one of the keys towards fully-integrated plasmonic nanocircuits in the next-generation chip technology.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Bai, Ping
Chu, Hong Son
Ang, L. K.
Ooi, Kelvin J. A.
format Article
author Bai, Ping
Chu, Hong Son
Ang, L. K.
Ooi, Kelvin J. A.
author_sort Bai, Ping
title Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator
title_short Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator
title_full Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator
title_fullStr Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator
title_full_unstemmed Ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator
title_sort ultracompact vanadium dioxide dual-mode plasmonic waveguide electroabsorption modulator
publishDate 2016
url https://hdl.handle.net/10356/81719
http://hdl.handle.net/10220/39642
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