Design of a Temperature-Aware Low-Voltage SRAM With Self-Adjustable Sensing Margin Enhancement for High-Temperature Applications up to 300 °C

• Main Authors: Kim, Tony Tae-Hyoung, Le Ba, Ngoc
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2016
• Subjects: Solid-State Circuits
• Online Access: https://hdl.handle.net/10356/81733; http://hdl.handle.net/10220/39665
• Institution: Nanyang Technological University

This paper presents an 8-Kbit low-power SRAM for high-temperature (up to 300°C) applications. For reliable low-voltage operation, we employed a decoupled 8T SRAM cell structure. To minimize the performance variations caused by the wide operating temperate range, supply voltage was selected in the ne...