Transition metal oxides on organic semiconductors

• المؤلفون الرئيسيون: Zhao, Yongbiao, Zhang, Jun, Liu, Shuwei, Gao, Yuan, Yang, Xuyong, Leck, Kheng Swee, Abiyasa, Agus Putu, Divayana, Yoga, Mutlugun, Evren, Tan, Swee Tiam, Xiong, Qihua, Demir, Hilmi Volkan, Sun, Xiao Wei
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: p-doping; Transition metal oxide
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81810; http://hdl.handle.net/10220/40973

Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar cells (OSCs), which can improve the stability of such devices as a result of i...