Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

• المؤلفون الرئيسيون: Ju, Zhen Gang, Liu, Wei, Zhang, Zi-Hui, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xue Liang, Lu, Shun Peng, Zhang, Yi Ping, Zhu, Bin Bin, Hasanov, Namig, Sun, Xiao Wei, Demir, Hilmi Volkan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: GaN; LED; QW; EBL; MOCVD
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/81874; http://hdl.handle.net/10220/39742
• المؤسسة: Nanyang Technological University

InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal–organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron...