Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal–organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron...
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sg-ntu-dr.10356-818742023-02-28T19:29:45Z Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer Ju, Zhen Gang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Kyaw, Zabu Zhang, Xue Liang Lu, Shun Peng Zhang, Yi Ping Zhu, Bin Bin Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences GaN; LED; QW; EBL; MOCVD InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal–organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer, not only leads to an improved hole injection but also reduces the electron leakage, thus enhancing the radiative recombination rates across the active region. Consequently, the light output power was enhanced by 10% for the QWEBL LED at a current density of 35 A/cm2. The efficiency droop of the optimized device was reduced to 16%. This is much smaller than that of the conventional p-AlGaN electron blocking layer LED, which is 31%. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version 2016-01-21T05:39:05Z 2019-12-06T14:42:04Z 2016-01-21T05:39:05Z 2019-12-06T14:42:04Z 2014 Journal Article Ju, Z. G., Liu, W., Zhang, Z.-H., Tan, S. T., Ji, Y., Kyaw, Z., et al. (2014). Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer. ACS Photonics, 1(4), 377-381. 2330-4022 https://hdl.handle.net/10356/81874 http://hdl.handle.net/10220/39742 10.1021/ph500001e en ACS Photonics © 2014 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Photonics, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/ph500001e]. 8 p. application/pdf |
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GaN; LED; QW; EBL; MOCVD Ju, Zhen Gang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Kyaw, Zabu Zhang, Xue Liang Lu, Shun Peng Zhang, Yi Ping Zhu, Bin Bin Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer |
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InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal–organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer, not only leads to an improved hole injection but also reduces the electron leakage, thus enhancing the radiative recombination rates across the active region. Consequently, the light output power was enhanced by 10% for the QWEBL LED at a current density of 35 A/cm2. The efficiency droop of the optimized device was reduced to 16%. This is much smaller than that of the conventional p-AlGaN electron blocking layer LED, which is 31%. |
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School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Ju, Zhen Gang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Kyaw, Zabu Zhang, Xue Liang Lu, Shun Peng Zhang, Yi Ping Zhu, Bin Bin Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan |
format |
Article |
author |
Ju, Zhen Gang Liu, Wei Zhang, Zi-Hui Tan, Swee Tiam Ji, Yun Kyaw, Zabu Zhang, Xue Liang Lu, Shun Peng Zhang, Yi Ping Zhu, Bin Bin Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan |
author_sort |
Ju, Zhen Gang |
title |
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer |
title_short |
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer |
title_full |
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer |
title_fullStr |
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer |
title_full_unstemmed |
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer |
title_sort |
advantages of the blue ingan/gan light-emitting diodes with an algan/gan/algan quantum well structured electron blocking layer |
publishDate |
2016 |
url |
https://hdl.handle.net/10356/81874 http://hdl.handle.net/10220/39742 |
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1759856926798118912 |