Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor

An efficient three-dimensional (3-D) fundamental locally one-dimensional finite-difference time-domain (FLOD-FDTD) method incorporated with memristor is presented. The FLOD-FDTD method achieves higher efficiency and simplicity with matrix-operator-free right-hand sides (RHS). The updating equations...

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Main Authors: Yang, Zaifeng, Tan, Eng Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2016
Subjects:
Online Access:https://hdl.handle.net/10356/81885
http://hdl.handle.net/10220/41013
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-818852020-03-07T13:57:23Z Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor Yang, Zaifeng Tan, Eng Leong School of Electrical and Electronic Engineering FDTD Memristor An efficient three-dimensional (3-D) fundamental locally one-dimensional finite-difference time-domain (FLOD-FDTD) method incorporated with memristor is presented. The FLOD-FDTD method achieves higher efficiency and simplicity with matrix-operator-free right-hand sides (RHS). The updating equations of memristor-incorporated FLOD-FDTD method are derived in detail. Numerical results are provided to show the trade-off between efficiency and accuracy. Published version 2016-07-28T07:43:13Z 2019-12-06T14:42:20Z 2016-07-28T07:43:13Z 2019-12-06T14:42:20Z 2016 Journal Article Yang, Z., & Tan, E. L. (2016). Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor. IEICE Transactions on Electronics, E99.C(7), 788-792. 0916-8524 https://hdl.handle.net/10356/81885 http://hdl.handle.net/10220/41013 10.1587/transele.E99.C.788 en IEICE Transactions on Electronics © 2016 Institute of Electronics, Information and Communication Engineers (IEICE). This paper was published in IEICE Transactions on Electronics and is made available as an electronic reprint (preprint) with permission of IEICE. The published version is available at: [http://dx.doi.org/10.1587/transele.E99.C.788]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic FDTD
Memristor
spellingShingle FDTD
Memristor
Yang, Zaifeng
Tan, Eng Leong
Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor
description An efficient three-dimensional (3-D) fundamental locally one-dimensional finite-difference time-domain (FLOD-FDTD) method incorporated with memristor is presented. The FLOD-FDTD method achieves higher efficiency and simplicity with matrix-operator-free right-hand sides (RHS). The updating equations of memristor-incorporated FLOD-FDTD method are derived in detail. Numerical results are provided to show the trade-off between efficiency and accuracy.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yang, Zaifeng
Tan, Eng Leong
format Article
author Yang, Zaifeng
Tan, Eng Leong
author_sort Yang, Zaifeng
title Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor
title_short Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor
title_full Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor
title_fullStr Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor
title_full_unstemmed Efficient 3-D Fundamental LOD-FDTD Method Incorporated with Memristor
title_sort efficient 3-d fundamental lod-fdtd method incorporated with memristor
publishDate 2016
url https://hdl.handle.net/10356/81885
http://hdl.handle.net/10220/41013
_version_ 1681048524020514816