On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, e...
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2014
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sg-ntu-dr.10356-823352020-03-07T12:37:14Z On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhen Gang Zhang, Xue Liang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2014-02-17T01:40:03Z 2019-12-06T14:53:33Z 2014-02-17T01:40:03Z 2019-12-06T14:53:33Z 2014 2014 Journal Article Kyaw, Z., Zhang, Z.- H., Liu, W., Tan, S. T., Ju, Z. G., Zhang, X. L., et al. (2014). On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes. Optics Express, 22(1), 809-816. 1094-4087 https://hdl.handle.net/10356/82335 http://hdl.handle.net/10220/18801 10.1364/OE.22.000809 en Optics express © 2014 Optical Society of America. |
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DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhen Gang Zhang, Xue Liang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes |
| description |
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n- GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhen Gang Zhang, Xue Liang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan |
| format |
Article |
| author |
Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhen Gang Zhang, Xue Liang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan |
| author_sort |
Kyaw, Zabu |
| title |
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes |
| title_short |
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes |
| title_full |
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes |
| title_fullStr |
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes |
| title_full_unstemmed |
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes |
| title_sort |
on the effect of n-gan/p-gan/n-gan/p-gan/n-gan built-in junctions in the n-gan layer for ingan/gan light-emitting diodes |
| publishDate |
2014 |
| url |
https://hdl.handle.net/10356/82335 http://hdl.handle.net/10220/18801 |
| _version_ |
1681040675938762752 |