On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

• Main Authors: Kyaw, Zabu, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Hasanov, Namig, Zhu, Binbin, Lu, Shunpeng, Zhang, Yiping, Sun, Xiao Wei, Demir, Hilmi Volkan
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• 在線閱讀: https://hdl.handle.net/10356/82335; http://hdl.handle.net/10220/18801

N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, e...