On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvemen...

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Main Authors: Zhang, Xueliang, Kyaw, Zabu, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhengang, Ji, Yun, Hasanov, Namig, Zhu, Binbin, Lu, Shunpeng, Zhang, Yiping, Sun, Xiao Wei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
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Online Access:https://hdl.handle.net/10356/82336
http://hdl.handle.net/10220/19577
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-823362020-03-07T14:02:39Z On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes Zhang, Xueliang Kyaw, Zabu Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Ju, Zhengang Ji, Yun Hasanov, Namig Zhu, Binbin Lu, Shunpeng Zhang, Yiping Sun, Xiao Wei Demir, Hilmi Volkan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2014-06-04T07:37:08Z 2019-12-06T14:53:34Z 2014-06-04T07:37:08Z 2019-12-06T14:53:34Z 2014 2014 Journal Article Zhang, Z. H., Liu, W., Tan, S. T., Ju, Z., Ji, Y., Kyaw, Z., et al. (2014). On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes. Optics Express, 22(S3), A779-A789. 1094-4087 https://hdl.handle.net/10356/82336 http://hdl.handle.net/10220/19577 10.1364/OE.22.00A779 en Optics express © 2014 Optical Society of America.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhang, Xueliang
Kyaw, Zabu
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhengang
Ji, Yun
Hasanov, Namig
Zhu, Binbin
Lu, Shunpeng
Zhang, Yiping
Sun, Xiao Wei
Demir, Hilmi Volkan
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
description Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhang, Xueliang
Kyaw, Zabu
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhengang
Ji, Yun
Hasanov, Namig
Zhu, Binbin
Lu, Shunpeng
Zhang, Yiping
Sun, Xiao Wei
Demir, Hilmi Volkan
format Article
author Zhang, Xueliang
Kyaw, Zabu
Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Ju, Zhengang
Ji, Yun
Hasanov, Namig
Zhu, Binbin
Lu, Shunpeng
Zhang, Yiping
Sun, Xiao Wei
Demir, Hilmi Volkan
author_sort Zhang, Xueliang
title On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
title_short On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
title_full On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
title_fullStr On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
title_full_unstemmed On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
title_sort on the mechanisms of ingan electron cooler in ingan/gan light-emitting diodes
publishDate 2014
url https://hdl.handle.net/10356/82336
http://hdl.handle.net/10220/19577
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