Ferroelectricity emerging in strained (111)-textured ZrO2 thin films

• المؤلفون الرئيسيون: Fan, Zhen, Deng, Jinyu, Wang, Jingxian, Liu, Ziyan, Yang, Ping, Xiao, Juanxiu, Yan, Xiaobing, Dong, Zhili, Wang, John, Chen, Jingsheng
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2016
• الموضوعات: Ferroelectric thin films
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82422; http://hdl.handle.net/10220/40010

(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO2thin films...