Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer
22 p.
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2017
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sg-ntu-dr.10356-826102023-02-28T19:28:36Z Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer Yu, Peng Lin, Junhao Sun, Linfeng Le, Quang Luan Yu, Xuechao Gao, Guanhui Hsu, Chuang-Han Wu, Di Chang, Tay-Rong Zeng, Qingsheng Liu, Fucai Wang, Qi Jie Jeng, Horng-Tay Lin, Hsin Trampert, Achim Shen, Zexiang Suenaga, Kazu Liu, Zheng School of Electrical and Electronic Engineering School of Materials Science & Engineering School of Physical and Mathematical Sciences 2D materials Band gap 22 p. A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1−x)Te2x, where x equals 0% –100%). The optical bandgaps of the WSe2(1−x)Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2017-05-08T07:18:14Z 2019-12-06T14:58:56Z 2017-05-08T07:18:14Z 2019-12-06T14:58:56Z 2016 2016 Journal Article Yu, P., Lin, J., Sun, L., Le, Q. L., Yu, X., & Gao, G. (2016). Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer. Advanced Materials, 29(4), 1603991-. 0935-9648 https://hdl.handle.net/10356/82610 http://hdl.handle.net/10220/42354 10.1002/adma.201603991 198959 en Advanced Materials © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201603991]. application/pdf |
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2D materials Band gap |
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2D materials Band gap Yu, Peng Lin, Junhao Sun, Linfeng Le, Quang Luan Yu, Xuechao Gao, Guanhui Hsu, Chuang-Han Wu, Di Chang, Tay-Rong Zeng, Qingsheng Liu, Fucai Wang, Qi Jie Jeng, Horng-Tay Lin, Hsin Trampert, Achim Shen, Zexiang Suenaga, Kazu Liu, Zheng Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer |
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22 p. |
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School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Yu, Peng Lin, Junhao Sun, Linfeng Le, Quang Luan Yu, Xuechao Gao, Guanhui Hsu, Chuang-Han Wu, Di Chang, Tay-Rong Zeng, Qingsheng Liu, Fucai Wang, Qi Jie Jeng, Horng-Tay Lin, Hsin Trampert, Achim Shen, Zexiang Suenaga, Kazu Liu, Zheng |
| format |
Article |
| author |
Yu, Peng Lin, Junhao Sun, Linfeng Le, Quang Luan Yu, Xuechao Gao, Guanhui Hsu, Chuang-Han Wu, Di Chang, Tay-Rong Zeng, Qingsheng Liu, Fucai Wang, Qi Jie Jeng, Horng-Tay Lin, Hsin Trampert, Achim Shen, Zexiang Suenaga, Kazu Liu, Zheng |
| author_sort |
Yu, Peng |
| title |
Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer |
| title_short |
Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer |
| title_full |
Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer |
| title_fullStr |
Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer |
| title_full_unstemmed |
Metal–Semiconductor Phase-Transition in WSe2(1-x)Te2x Monolayer |
| title_sort |
metal–semiconductor phase-transition in wse2(1-x)te2x monolayer |
| publishDate |
2017 |
| url |
https://hdl.handle.net/10356/82610 http://hdl.handle.net/10220/42354 |
| _version_ |
1759854109013311488 |