Single-photon sources in diamond, silicon carbide and gallium nitride

• Main Author: Zhou, Yu
• Other Authors: Gao Weibo
• Format: Theses and Dissertations
• Language: English
• Published: 2019
• Subjects: DRNTU::Science::Physics::Atomic physics::Solid state physics
• Online Access: https://hdl.handle.net/10356/82980; http://hdl.handle.net/10220/47535
• Institution: Nanyang Technological University

Solid-state single-photon sources are the central blocks for many scalable quantum applications including quantum computing, quantum key distributions, and quantum simulations. Over the years, diverse quantum emitters have been studied. This thesis endeavored investigations into single-photon sources in diamond, silicon carbide and gallium nitride in three directions: Firstly, identification of the single-photon sources that have never been reported before and fabrication technique for scalable single germanium vacancy centers in diamond. Telecom wavelength single photon sources have been found in both gallium nitride and silicon carbide. More importantly, those emitters work even at room temperature and are promising for quantum key distribution applications in the future. Secondly, the spin properties study of the single silicon vacancy in diamond: the silicon vacancy optical transition has been coherently controlled in the work. The optical Rabi oscillations in the time domain have been observed. The ultrafast spin control of the silicon vacancy has been also achieved. Thirdly, quantum applications of the divacancy spins in silicon carbide: nano-scale thermometry based on the quantum control of the divacancy spin in silicon carbide has been introduced. Especially, we found a self-protected effect that the transverse strain can protect the spin from the local magnetic field and enables longer coherence time. Finally, some possible directions have been discussed.