Design of a 4-level active photonics phase change switch using VO 2 and Ge 2 Sb 2 Te 5
The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due...
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sg-ntu-dr.10356-830052023-07-14T15:57:11Z Design of a 4-level active photonics phase change switch using VO 2 and Ge 2 Sb 2 Te 5 Meng, Yun Behera, Jitendra K. Ke, Yujie Chew, Litian Wang, Yang Long, Yi Simpson, Robert E. School of Materials Science & Engineering Optical Coatings Optical Constants DRNTU::Engineering::Materials The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Published version 2019-01-23T01:55:16Z 2019-12-06T15:10:05Z 2019-01-23T01:55:16Z 2019-12-06T15:10:05Z 2018 Journal Article Meng, Y., Behera, J. K., Ke, Y., Chew, L., Wang, Y., Long, Y., & Simpson, R. E. (2018). Design of a 4-level active photonics phase change switch using VO2 and Ge2Sb2Te5. Applied Physics Letters, 113(7), 071901-. doi:10.1063/1.5043521 0003-6951 https://hdl.handle.net/10356/83005 http://hdl.handle.net/10220/47546 10.1063/1.5043521 en Applied Physics Letters © 2018 The Author(s). All rights reserved. This paper was published by AIP in Applied Physics Letters and is made available with permission of The Author(s). 5 p. application/pdf |
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Optical Coatings Optical Constants DRNTU::Engineering::Materials Meng, Yun Behera, Jitendra K. Ke, Yujie Chew, Litian Wang, Yang Long, Yi Simpson, Robert E. Design of a 4-level active photonics phase change switch using VO 2 and Ge 2 Sb 2 Te 5 |
| description |
The objective of this work is to design and demonstrate multilevel optical switches by combining different phase change materials. Ge2Sb2Te5 and VO2 nanolayer structures were designed to maximize the optical contrast between four different reflective states. These different optical states arise due to the independent structural phase transitions of VO2 and Ge2Sb2Te5 at different temperatures. The transfer matrix method was used to model Fresnel reflection for each structural phase combination and then to optimize the VO2 and Ge2Sb2Te5 layer thicknesses, which were found to be 70 nm and 50 nm. These multilevel optical switching results provide further possibilities to design composite materials for applications in active and programmable photonics. |
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School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Meng, Yun Behera, Jitendra K. Ke, Yujie Chew, Litian Wang, Yang Long, Yi Simpson, Robert E. |
| format |
Article |
| author |
Meng, Yun Behera, Jitendra K. Ke, Yujie Chew, Litian Wang, Yang Long, Yi Simpson, Robert E. |
| author_sort |
Meng, Yun |
| title |
Design of a 4-level active photonics phase change switch using VO
2
and Ge
2
Sb
2
Te
5 |
| title_short |
Design of a 4-level active photonics phase change switch using VO
2
and Ge
2
Sb
2
Te
5 |
| title_full |
Design of a 4-level active photonics phase change switch using VO
2
and Ge
2
Sb
2
Te
5 |
| title_fullStr |
Design of a 4-level active photonics phase change switch using VO
2
and Ge
2
Sb
2
Te
5 |
| title_full_unstemmed |
Design of a 4-level active photonics phase change switch using VO
2
and Ge
2
Sb
2
Te
5 |
| title_sort |
design of a 4-level active photonics phase change switch using vo
2
and ge
2
sb
2
te
5 |
| publishDate |
2019 |
| url |
https://hdl.handle.net/10356/83005 http://hdl.handle.net/10220/47546 |
| _version_ |
1773551311742042112 |