Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures

• المؤلفون الرئيسيون: Zhou, Jiadong, Tang, Bijun, Lin, Junhao, Lv, Danhui, Shi, Jia, Sun, Linfeng, Zeng, Qingsheng, Niu, Lin, Liu, Fucai, Wang, Xiaowei, Liu, Xinfeng, Suenaga, Kazu, Jin, Chuanhong, Liu, Zheng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Engineering::Materials; Morphology Engineering; MoS2-WS2 Heterostructure
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/83054; http://hdl.handle.net/10220/50410
• المؤسسة: Nanyang Technological University

In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesi...