Morphology engineering in monolayer MoS2‐WS2 lateral heterostructures

• Main Authors: Zhou, Jiadong, Tang, Bijun, Lin, Junhao, Lv, Danhui, Shi, Jia, Sun, Linfeng, Zeng, Qingsheng, Niu, Lin, Liu, Fucai, Wang, Xiaowei, Liu, Xinfeng, Suenaga, Kazu, Jin, Chuanhong, Liu, Zheng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Engineering::Materials; Morphology Engineering; MoS2-WS2 Heterostructure
• Online Access: https://hdl.handle.net/10356/83054; http://hdl.handle.net/10220/50410
• Institution: Nanyang Technological University

In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS2‐WS2, MoS2‐MoSe2, MoS2‐WSe2, and WSe2‐WS2, are synthesi...