Compositionally controlled plasmonics in amorphous semiconductor metasurfaces

Compositionally controlled plasmonics in amorphous semiconductor metasurfaces

Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization t...

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Bibliographic Details
Main Authors: Piccinotti, Davide, Gholipour, Behrad, Yao, Jin, Macdonald, Kevin F., Hayden, Brian E., Zheludev, Nikolay I.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2019
Subjects:
Semiconductor Materials
DRNTU::Science::Physics
Metamaterials
Online Access:https://hdl.handle.net/10356/83143
http://hdl.handle.net/10220/47571
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Institution: Nanyang Technological University
Language: English
Description
Summary:Amorphous bismuth telluride (Bi:Te) provides a composition-dependent, CMOS-compatible alternative material platform for plasmonics in the ultraviolet-visible spectral range. Thin films of the chalcogenide semiconductor are found, using high-throughput physical vapor deposition and characterization techniques, to exhibit a plasmonic response (a negative value of the real part of relative permittivity) over a band of wavelengths extending from ~250 nm to between 530 and 978 nm, depending on alloy composition (Bi:Te at% ratio). The plasmonic response is illustrated via the fabrication of subwavelength period nano-grating metasurfaces, which present strong, period-dependent plasmonic absorption resonances in the visible range, manifested in the perceived color of the nanostructured domains in reflection.

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