Compact model characteristics for generic MIS-HEMTs

• Main Authors: Chiah, Siau Ben, Ajaykumar, Arjun, Liu, Xu, Syamal, Binit, Zhou, Hong Tao, Zhou, Xing
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: 2-D Electron Gas; Compact Model; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/83160; http://hdl.handle.net/10220/47581; http://www.nsti.org/procs/Nanotech2014v2/8/T2.191
• Institution: Nanyang Technological University

III-V channel field-effect transistors (FETs), such as metal–insulator–semiconductor high electron-mobility transistors (MIS-HEMTs), have emerged as promising candidates for future generation high-frequency, high-voltage, and high-power applications. Development of a compact model for generic HEMTs in III-V/Si co-integrated hybrid circuit design is becoming an urgent need for semiconductor industry. This paper presents device characteristics as modeled by the compact model (Xsim) for generic MIS-HEMTs. The model is based on unified regional modeling (URM) of the 2-dimensional electron gas (2DEG) charge density, including the two lowest sub-bands of the triangular well in the strong-inversion region, and extending to the moderate-inversion and subthreshold regions in a single-piece formulation. The 2DEG charge density model is adopted in the surface-potential-based current/charge model for conventional bulk/SOI/multigate MOSFETs, which makes it compatible and scalable for future III-V/Si co-integrated technologies. HEMT-specific features are also discussed, such as nonlinear source/drain access resistances, current-collapse, self-heating, parallel-channel, and quasi-ballistic effects.