Perovskite Materials for Light-Emitting Diodes and Lasers

Organic–inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with p...

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Main Authors: Veldhuis, Sjoerd Antonius, Boix, Pablo P., Yantara, Natalia, Li, Mingjie, Sum, Tze Chien, Mathews, Nripan, Mhaisalkar, Subodh Gautam
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2017
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Online Access:https://hdl.handle.net/10356/83316
http://hdl.handle.net/10220/42527
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-833162021-01-13T06:56:59Z Perovskite Materials for Light-Emitting Diodes and Lasers Veldhuis, Sjoerd Antonius Boix, Pablo P. Yantara, Natalia Li, Mingjie Sum, Tze Chien Mathews, Nripan Mhaisalkar, Subodh Gautam School of Materials Science & Engineering School of Physical and Mathematical Sciences Energy Research Institute @ NTU (ERI@N) Perovskites Light-emitting devices Organic–inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A−1 have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Accepted version 2017-05-30T09:16:00Z 2019-12-06T15:19:50Z 2017-05-30T09:16:00Z 2019-12-06T15:19:50Z 2016 Journal Article Veldhuis, S. A., Boix, P. P., Yantara, N., Li, M., Sum, T. C., Mathews, N., et al. (2016). Perovskite Materials for Light-Emitting Diodes and Lasers. Advanced Materials, 28(32), 6804-6834. 0935-9648 https://hdl.handle.net/10356/83316 http://hdl.handle.net/10220/42527 10.1002/adma.201600669 en Advanced Materials © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the author created version of a work that has been peer reviewed and accepted for publication by Advanced Materials, Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1002/adma.201600669]. 75 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Perovskites
Light-emitting devices
spellingShingle Perovskites
Light-emitting devices
Veldhuis, Sjoerd Antonius
Boix, Pablo P.
Yantara, Natalia
Li, Mingjie
Sum, Tze Chien
Mathews, Nripan
Mhaisalkar, Subodh Gautam
Perovskite Materials for Light-Emitting Diodes and Lasers
description Organic–inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A−1 have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Veldhuis, Sjoerd Antonius
Boix, Pablo P.
Yantara, Natalia
Li, Mingjie
Sum, Tze Chien
Mathews, Nripan
Mhaisalkar, Subodh Gautam
format Article
author Veldhuis, Sjoerd Antonius
Boix, Pablo P.
Yantara, Natalia
Li, Mingjie
Sum, Tze Chien
Mathews, Nripan
Mhaisalkar, Subodh Gautam
author_sort Veldhuis, Sjoerd Antonius
title Perovskite Materials for Light-Emitting Diodes and Lasers
title_short Perovskite Materials for Light-Emitting Diodes and Lasers
title_full Perovskite Materials for Light-Emitting Diodes and Lasers
title_fullStr Perovskite Materials for Light-Emitting Diodes and Lasers
title_full_unstemmed Perovskite Materials for Light-Emitting Diodes and Lasers
title_sort perovskite materials for light-emitting diodes and lasers
publishDate 2017
url https://hdl.handle.net/10356/83316
http://hdl.handle.net/10220/42527
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