Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

• Main Authors: Zhang, Yiping, Zhang, Zi-Hui, Tan, Swee Tiam, Hernandez-Martinez, Pedro Ludwig, Zhu, Binbin, Lu, Shunpeng, Kang, Xue Jun, Sun, Xiao Wei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: Doping; Light emitting diodes
• Online Access: https://hdl.handle.net/10356/83365; http://hdl.handle.net/10220/42545
• Institution: Nanyang Technological University

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-...