The improvement of thermoelectric property of bulk ZnO via ZnS addition : influence of intrinsic defects

• Main Authors: Zhu, BeiBei, Li, Di, Zhang, TianShu, Luo, YuBo, Donelson, Richard, Zhang, Ting, Zheng, Yun, Du, ChengFeng, Wei, Lei, Hng, Huey Hoon
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: DRNTU::Engineering::Materials; ZnO; Defects
• Online Access: https://hdl.handle.net/10356/83393; http://hdl.handle.net/10220/48155
• Institution: Nanyang Technological University

As in any semiconducting solids, intrinsic defects can affect the properties of ZnO, such as the electrical and thermal conductivities. Defect engineering is usually focused on optimizing the materials’ synthesis or annealing parameters, i.e., temperature, atmosphere, etc. Here we report an approach...