A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnOx–Al2O3 thin film structure

In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al2O3) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the pa...

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書目詳細資料
Main Authors:	Li, Hua Kai, Chen, Tupei, Liu, P., Hu, S. G., Liu, Y., Zhang, Qing, Lee, Pooi See
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2017
主題:	Ultraviolet light Synapses
在線閱讀:	https://hdl.handle.net/10356/83557 http://hdl.handle.net/10220/42674
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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