APA استشهاد

Lao, Y. F., Perera, A. G. U., Wang, H. L., Zhao, J. H., Jin, Y. J., Zhang, D. H., & Engineering, S. o. E. a. E. (2017). Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors.

استشهاد بنمط شيكاغو

Lao, Y. F., A. G. U. Perera, H. L. Wang, J. H. Zhao, Y. J. Jin, Dao Hua Zhang, و School of Electrical and Electronic Engineering. Optical Characteristics of P-type GaAs-based Semiconductors Towards Applications in Photoemission Infrared Detectors. 2017.

MLA استشهاد

Lao, Y. F., et al. Optical Characteristics of P-type GaAs-based Semiconductors Towards Applications in Photoemission Infrared Detectors. 2017.

تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.