Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni] n /Co/Ta Multilayer Hall Bars

Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show tha...

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Bibliographic Details
Main Authors: Li, Sihua, Goolaup, Sarjoosing, Kwon, Jaesuk, Luo, Feilong, Gan, Weiliang, Lew, Wen Siang
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2017
Subjects:
Online Access:https://hdl.handle.net/10356/83634
http://hdl.handle.net/10220/42730
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Institution: Nanyang Technological University
Language: English
Description
Summary:Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show that by selecting a film stack with weak out-of-plane magnetic anisotropy, field-free SOT-induced switching can be achieved in micron sized multilayers. Using direct current, deterministic bipolar magnetization reversal is obtained in Pt/[Co/Ni]2/Co/Ta structures. Kerr imaging reveals that the SOT-induced magnetization switching process is completed via the nucleation of reverse domain and propagation of domain wall in the system.