Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni] n /Co/Ta Multilayer Hall Bars
Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show tha...
محفوظ في:
المؤلفون الرئيسيون: | , , , , , |
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مؤلفون آخرون: | |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2017
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الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/83634 http://hdl.handle.net/10220/42730 |
الوسوم: |
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المؤسسة: | Nanyang Technological University |
اللغة: | English |
الملخص: | Spin-orbit torque (SOT) induced by electric current has attracted extensive attention as an efficient method of controlling the magnetization in nanomagnetic structures. SOT-induced magnetization reversal is usually achieved with the aid of an in-plane bias magnetic field. In this paper, we show that by selecting a film stack with weak out-of-plane magnetic anisotropy, field-free SOT-induced switching can be achieved in micron sized multilayers. Using direct current, deterministic bipolar magnetization reversal is obtained in Pt/[Co/Ni]2/Co/Ta structures. Kerr imaging reveals that the SOT-induced magnetization switching process is completed via the nucleation of reverse domain and propagation of domain wall in the system. |
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