Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors

Poor charge injection and transport at the electrode/semiconductor contacts has been so far a severe performance hurdle for bottom-contact bottom-gate (BCBG) organic field-effect transistors (OFETs). Here, we have developed a simple, economic, and effective method to improve the carrier injection ef...

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Main Authors: Wang, Zongrui, Dong, Huanli, Zou, Ye, Zhao, Qiang, Tan, Jiahui, Liu, Jie, Lu, Xiuqiang, Xiao, Jinchong, Zhang, Qichun, Hu, Wenping
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2017
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Online Access:https://hdl.handle.net/10356/83724
http://hdl.handle.net/10220/42773
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-837242023-07-14T15:52:38Z Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors Wang, Zongrui Dong, Huanli Zou, Ye Zhao, Qiang Tan, Jiahui Liu, Jie Lu, Xiuqiang Xiao, Jinchong Zhang, Qichun Hu, Wenping School of Materials Science & Engineering Bottom-contact Organic Field-effect Transistor Contact Resistance Poor charge injection and transport at the electrode/semiconductor contacts has been so far a severe performance hurdle for bottom-contact bottom-gate (BCBG) organic field-effect transistors (OFETs). Here, we have developed a simple, economic, and effective method to improve the carrier injection efficiency and obtained high-performance devices with low cost and widely used source/drain (S/D) electrodes (Ag/Cu). Through the simple electrode etching process, the work function of the electrodes is more aligned with the semiconductors, which reduces the energy barrier and facilitates the charge injection. Besides, the formation of the thinned electrode edge with desirable micro/nanostructures not only leads to the enlarged contact side area beneficial for the carrier injection but also is in favor of the molecular self-organization for continuous crystal growth at the contact/active channel interface, which is better for the charge injection and transport. These effects give rise to the great reduction of contact resistance and the amazing improvement of the low-cost bottom-contact configuration OFETs performance. Accepted version 2017-06-29T07:25:02Z 2019-12-06T15:30:42Z 2017-06-29T07:25:02Z 2019-12-06T15:30:42Z 2016 Journal Article Wang, Z., Dong, H., Zou, Y., Zhao, Q., Tan, J., Liu, J., et al. (2016). Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors. ACS Applied Materials & Interfaces, 8(12), 7919-7927. 1944-8244 https://hdl.handle.net/10356/83724 http://hdl.handle.net/10220/42773 10.1021/acsami.5b12307 en ACS Applied Materials & Interfaces © 2016 American Chemical Society. This is the author created version of a work that has been peer reviewed and accepted for publication by ACS Applied Materials & Interfaces, American Chemical Society. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1021/acsami.5b12307]. 43 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Bottom-contact Organic Field-effect Transistor
Contact Resistance
spellingShingle Bottom-contact Organic Field-effect Transistor
Contact Resistance
Wang, Zongrui
Dong, Huanli
Zou, Ye
Zhao, Qiang
Tan, Jiahui
Liu, Jie
Lu, Xiuqiang
Xiao, Jinchong
Zhang, Qichun
Hu, Wenping
Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors
description Poor charge injection and transport at the electrode/semiconductor contacts has been so far a severe performance hurdle for bottom-contact bottom-gate (BCBG) organic field-effect transistors (OFETs). Here, we have developed a simple, economic, and effective method to improve the carrier injection efficiency and obtained high-performance devices with low cost and widely used source/drain (S/D) electrodes (Ag/Cu). Through the simple electrode etching process, the work function of the electrodes is more aligned with the semiconductors, which reduces the energy barrier and facilitates the charge injection. Besides, the formation of the thinned electrode edge with desirable micro/nanostructures not only leads to the enlarged contact side area beneficial for the carrier injection but also is in favor of the molecular self-organization for continuous crystal growth at the contact/active channel interface, which is better for the charge injection and transport. These effects give rise to the great reduction of contact resistance and the amazing improvement of the low-cost bottom-contact configuration OFETs performance.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Wang, Zongrui
Dong, Huanli
Zou, Ye
Zhao, Qiang
Tan, Jiahui
Liu, Jie
Lu, Xiuqiang
Xiao, Jinchong
Zhang, Qichun
Hu, Wenping
format Article
author Wang, Zongrui
Dong, Huanli
Zou, Ye
Zhao, Qiang
Tan, Jiahui
Liu, Jie
Lu, Xiuqiang
Xiao, Jinchong
Zhang, Qichun
Hu, Wenping
author_sort Wang, Zongrui
title Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors
title_short Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors
title_full Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors
title_fullStr Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors
title_full_unstemmed Soft-Etching Copper and Silver Electrodes for Significant Device Performance Improvement toward Facile, Cost-Effective, Bottom-Contacted, Organic Field-Effect Transistors
title_sort soft-etching copper and silver electrodes for significant device performance improvement toward facile, cost-effective, bottom-contacted, organic field-effect transistors
publishDate 2017
url https://hdl.handle.net/10356/83724
http://hdl.handle.net/10220/42773
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