Nanoscale groove textured β-Ga2O3 by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity

• Main Authors: Kim, Munho, Huang, Hsien-Chih, Kim, Jeong Dong, Chabak, Kelson D., Kalapala, Akhil Raj Kumar, Zhou, Weidong, Li, Xiuling
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Photodiodes; Semiconductors; DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/83836; http://hdl.handle.net/10220/49130
• Institution: Nanyang Technological University

β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has b...