Magnetoelectronic properties of graphene dressed by a high-frequency field

• Main Authors: Kibis, O. V., Morina, S., Dini, K., Shelykh, I. A.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2017
• Subjects: Graphene; Magnetoelectronic
• Online Access: https://hdl.handle.net/10356/83874; http://hdl.handle.net/10220/42870
• Institution: Nanyang Technological University

Solving the Schrödinger problem for electrons in graphene subjected to both a stationary magnetic field and a strong high-frequency electromagnetic wave (dressing field), we found that the dressing field drastically changes the structure of Landau levels in graphene. As a consequence, the magnetoelectronic properties of graphene are very sensitive to the dressing field. Particularly, it is demonstrated theoretically that the dressing field strongly changes the optical spectra and the Shubnikov–de Haas oscillations. As a result, the developed theory opens a way for controlling magnetoelectronic properties of graphene with light.