Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field
We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrödinger problem for dressed electrons, we demonstrated that the field drastically...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/83875 http://hdl.handle.net/10220/42869 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrödinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic devices. |
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