Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells

Long Minority-Carrier Diffusion Length and Low Surface-Recombination Velocity in Inorganic Lead-Free CsSnI3 Perovskite Crystal for Solar Cells

Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion l...

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Bibliographic Details
Main Authors: Wu, Bo, Zhou, Yuanyuan, Xing, Guichuan, Xu, Qiang, Garces, Hector F., Solanki, Ankur, Goh, Teck Wee, Padture, Nitin P., Sum, Tze Chien
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2017
Subjects:
Carrier dynamics
Lead-free perovskite crystal
Online Access:https://hdl.handle.net/10356/84069
http://hdl.handle.net/10220/43555
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Institution: Nanyang Technological University
Language: English
Description
Summary:Sn-based perovskites are promising Pb-free photovoltaic materials with an ideal 1.3 eV bandgap. However, to date, Sn-based thin film perovskite solar cells have yielded relatively low power conversion efficiencies (PCEs). This is traced to their poor photophysical properties (i.e., short diffusion lengths (<30 nm) and two orders of magnitude higher defect densities) than Pb-based systems. Herein, it is revealed that melt-synthesized cesium tin iodide (CsSnI3) ingots containing high-quality large single crystal (SC) grains transcend these fundamental limitations.

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