Enhancement of thermal robustness in magnetic tunnel junctions with perpendicular magnetic anisotropy

• المؤلف الرئيسي: Law, Wai Cheung
• مؤلفون آخرون: Lew Wen Siang
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2019
• الموضوعات: Science::Physics::Electricity and magnetism
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/85158; http://hdl.handle.net/10220/50350
• المؤسسة: Nanyang Technological University

Spin transfer torque magnetoresistive random access memory (STT-MRAM) has been recognized to be the most promising non-volatile memory technology for future technology nodes. STT-MRAM utilizes an array of magnetic tunnel junctions (MTJ) as its storage elements, which in its rudimentary form consi...