Enhancement of thermal robustness in magnetic tunnel junctions with perpendicular magnetic anisotropy

• 主要作者: Law, Wai Cheung
• 其他作者: Lew Wen Siang
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2019
• 主題: Science::Physics::Electricity and magnetism
• 在線閱讀: https://hdl.handle.net/10356/85158; http://hdl.handle.net/10220/50350
• 機構: Nanyang Technological University

Spin transfer torque magnetoresistive random access memory (STT-MRAM) has been recognized to be the most promising non-volatile memory technology for future technology nodes. STT-MRAM utilizes an array of magnetic tunnel junctions (MTJ) as its storage elements, which in its rudimentary form consi...