High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

• Main Authors: Chow, Wai Leong, Yu, Peng, Liu, Fucai, Hong, Jinhua, Wang, Xingli, Zeng, Qingsheng, Hsu, Chuang-Han, Zhu, Chao, Zhou, Jiadong, Wang, Xiaowei, Xia, Juan, Yan, Jiaxu, Chen, Yu, Wu, Di, Yu, Ting, Shen, Zexiang, Lin, Hsin, Jin, Chuanhong, Tay, Beng Kang, Liu, Zheng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: 2D materials; Palladium diselenide
• Online Access: https://hdl.handle.net/10356/85207; http://hdl.handle.net/10220/43670
• Institution: Nanyang Technological University

Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2 show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2 to exhibit electron-dominated transport with high mobility (µe (max) = 216 cm2 V−1 s−1) and on/off ratio up to 103. Hole-dominated-transport PdSe2 can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2 will spark interests in the less explored regime of noble-TMDCs.