Preparation of Single-Layer MoS2xSe2(1-x) and MoxW1-xS2 Nanosheets with High-Concentration Metallic 1T Phase

• Main Authors: Tan, Chaoliang, Zhao, Wei, Chaturvedi, Apoorva, Fei, Zhen, Zeng, Zhiyuan, Chen, Junze, Huang, Ying, Ercius, Peter, Luo, Zhimin, Qi, Xiaoying, Chen, Bo, Lai, Zhuangchai, Li, Bing, Zhang, Xiao, Yang, Jian, Zong, Yun, Jin, Chuanhong, Zheng, Haimei, Kloc, Christian, Zhang, Hua
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2017
• Subjects: MoS2xSe2(1−x); Nanosheets
• Online Access: https://hdl.handle.net/10356/86532; http://hdl.handle.net/10220/44023
• Institution: Nanyang Technological University

The high-yield and scalable production of single-layer ternary transition metal dichalcogenide nanosheets with ≈66% of metallic 1T phase, including MoS2xSe2(1–x) and MoxW1–xS2 is achieved via electrochemical Li-intercalation and the exfoliation method. Thin film MoS2xSe2(1-x) nanosheets drop-cast on...