White-light-induced annihilation of percolation paths in SIO2 and high-k dielectrics - prospect for gate oxide reliability rejuvenation and optical-enabled functions in CMOS integrated circuits

• Main Authors: Ang, Diing Shenp, Kawashima, Tomohito, Zhou, Yu, Yew, Kwang Sing, Bera, Milan Kumar, Zhang, Haizhong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Percolation Path; Oxide
• Online Access: https://hdl.handle.net/10356/86633; http://hdl.handle.net/10220/45197
• Institution: Nanyang Technological University

The formation of nanoscale percolation paths or conducting filaments in oxide materials such as SiO2, HfO2, etc. presents both a challenge to gate oxide reliability as well as an opportunity to a next-generation resistive memory technology, as these materials have already been heavily deployed in ma...