Sasangka, W. A., Syaranamual, G. J., Gao, Y., Made, R. I., Gan, C. L., Thompson, C. V., & Engineering, S. o. M. S. &. (2017). Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.

Sasangka, W. A., G. J. Syaranamual, Yu Gao, Riko I. Made, Chee Lip Gan, C. V. Thompson, و School of Materials Science & Engineering. Improved Reliability of AlGaN/GaN-on-Si High Electron Mobility Transistors (HEMTs) With High Density Silicon Nitride Passivation. 2017.

Sasangka, W. A., et al. Improved Reliability of AlGaN/GaN-on-Si High Electron Mobility Transistors (HEMTs) With High Density Silicon Nitride Passivation. 2017.