Sasangka, W. A., Syaranamual, G. J., Gao, Y., Made, R. I., Gan, C. L., Thompson, C. V., & Engineering, S. o. M. S. &. (2017). Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.

Sasangka, W. A., G. J. Syaranamual, Yu Gao, Riko I. Made, Chee Lip Gan, C. V. Thompson, and School of Materials Science & Engineering. Improved Reliability of AlGaN/GaN-on-Si High Electron Mobility Transistors (HEMTs) With High Density Silicon Nitride Passivation. 2017.

Sasangka, W. A., et al. Improved Reliability of AlGaN/GaN-on-Si High Electron Mobility Transistors (HEMTs) With High Density Silicon Nitride Passivation. 2017.