APA引文

Sasangka, W. A., Syaranamual, G. J., Gao, Y., Made, R. I., Gan, C. L., Thompson, C. V., & Engineering, S. o. M. S. &. (2017). Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation.

Chicago Style Citation

Sasangka, W. A., G. J. Syaranamual, Yu Gao, Riko I. Made, Chee Lip Gan, C. V. Thompson, and School of Materials Science & Engineering. Improved Reliability of AlGaN/GaN-on-Si High Electron Mobility Transistors (HEMTs) With High Density Silicon Nitride Passivation. 2017.

MLA引文

Sasangka, W. A., et al. Improved Reliability of AlGaN/GaN-on-Si High Electron Mobility Transistors (HEMTs) With High Density Silicon Nitride Passivation. 2017.