Trimethylamine borane: a new single-source precursor for monolayer h-BN single crystals and h-BCN thin films

• المؤلفون الرئيسيون: Tay, Roland Yingjie, Li, Hongling, Tsang, Siu Hon, Zhu, Minmin, Loeblein, Manuela, Jing, Lin, Leong, Fei Ni, Teo, Edwin Hang Tong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2018
• الموضوعات: Boron Nitride; Chemical Vapor Deposition
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/87212; http://hdl.handle.net/10220/45262

Due to their exceptional chemical and thermal stabilities as well as electrically insulating property, atomically thin hexagonal boron nitride (h-BN) films have been identified as a promising class of dielectric substrate and encapsulation material for high-performance two-dimensional (2D) heterostr...