Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures
Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrT...
Saved in:
Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2018
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/87271 http://hdl.handle.net/10220/44366 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-87271 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-872712023-02-28T19:33:03Z Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures Chen, Zuhuang Chen, Zhanghui Liu, Z. Q. Holtz, M. E. Li, C. J. Wang, Xiao Renshaw Lü, W. M. Motapothula, M. Fan, L. S. Turcaud, J. A. Dedon, L. R. Frederick, C. Xu, R. J. Gao, R. N’Diaye, A. T. Arenholz, E. Mundy, J. A. Venkatesan, T. Muller, D. A. Wang, L.-W. Liu, Jian Martin, L. W. School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Antiferromagnetic Insulators Critical Thickness Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales. NRF (Natl Research Foundation, S’pore) Published version 2018-02-01T05:05:24Z 2019-12-06T16:38:37Z 2018-02-01T05:05:24Z 2019-12-06T16:38:37Z 2017 Journal Article Chen, Z., Chen, Z., Liu, Z. Q., Holtz, M. E., Li, C. J., Wang, X. R., et al. (2017). Electron accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures. Physical Review Letters, 119(15), 156801-. 0031-9007 https://hdl.handle.net/10356/87271 http://hdl.handle.net/10220/44366 10.1103/PhysRevLett.119.156801 en Physical Review Letters © 2017 American Physical Society (APS). This paper was published in Physical Review Letters and is made available as an electronic reprint (preprint) with permission of American Physical Society (APS). The published version is available at: [http://dx.doi.org/10.1103/PhysRevLett.119.156801]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 7 p. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
Antiferromagnetic Insulators Critical Thickness |
spellingShingle |
Antiferromagnetic Insulators Critical Thickness Chen, Zuhuang Chen, Zhanghui Liu, Z. Q. Holtz, M. E. Li, C. J. Wang, Xiao Renshaw Lü, W. M. Motapothula, M. Fan, L. S. Turcaud, J. A. Dedon, L. R. Frederick, C. Xu, R. J. Gao, R. N’Diaye, A. T. Arenholz, E. Mundy, J. A. Venkatesan, T. Muller, D. A. Wang, L.-W. Liu, Jian Martin, L. W. Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures |
description |
Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Chen, Zuhuang Chen, Zhanghui Liu, Z. Q. Holtz, M. E. Li, C. J. Wang, Xiao Renshaw Lü, W. M. Motapothula, M. Fan, L. S. Turcaud, J. A. Dedon, L. R. Frederick, C. Xu, R. J. Gao, R. N’Diaye, A. T. Arenholz, E. Mundy, J. A. Venkatesan, T. Muller, D. A. Wang, L.-W. Liu, Jian Martin, L. W. |
format |
Article |
author |
Chen, Zuhuang Chen, Zhanghui Liu, Z. Q. Holtz, M. E. Li, C. J. Wang, Xiao Renshaw Lü, W. M. Motapothula, M. Fan, L. S. Turcaud, J. A. Dedon, L. R. Frederick, C. Xu, R. J. Gao, R. N’Diaye, A. T. Arenholz, E. Mundy, J. A. Venkatesan, T. Muller, D. A. Wang, L.-W. Liu, Jian Martin, L. W. |
author_sort |
Chen, Zuhuang |
title |
Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures |
title_short |
Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures |
title_full |
Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures |
title_fullStr |
Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures |
title_full_unstemmed |
Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures |
title_sort |
electron accumulation and emergent magnetism in lamno3/srtio3 heterostructures |
publishDate |
2018 |
url |
https://hdl.handle.net/10356/87271 http://hdl.handle.net/10220/44366 |
_version_ |
1759857335657824256 |