A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors

The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that wer...

Full description

Saved in:
Bibliographic Details
Main Authors: Ajaykumar, Arjun, Zhou, Xing, Chiah, Siau Ben
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2018
Subjects:
Apparent Mean Free Path
Apparent Mobility
Online Access:https://hdl.handle.net/10356/88179
http://hdl.handle.net/10220/44601
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-88179
record_format dspace
spelling sg-ntu-dr.10356-881792020-03-07T13:57:30Z A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors Ajaykumar, Arjun Zhou, Xing Chiah, Siau Ben School of Electrical and Electronic Engineering Nanoelectronics Center of Excellence Apparent Mean Free Path Apparent Mobility The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that were developed for DD-based devices to study LFN even in nanoscale regime. Validity of these models is questionable. In this letter, we extend the conventional carrier-number and correlated-mobility fluctuation model to the QB regime. The model is in accordance with the “apparent mean free path” (λapp) model, which predicts scattering limited noise mechanism in the QB regime. The model is validated with LFN measurement data for III-V QB devices, and shows good agreement with the expected behavior. NRF (Natl Research Foundation, S’pore) 2018-03-23T01:53:33Z 2019-12-06T16:57:48Z 2018-03-23T01:53:33Z 2019-12-06T16:57:48Z 2017 2017 Journal Article Ajaykumar, A., Zhou, X., & Chiah, S. B. (2017). A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors. IEEE Electron Device Letters, 38(8), 1113-1116. 0741-3106 https://hdl.handle.net/10356/88179 http://hdl.handle.net/10220/44601 10.1109/LED.2017.2716411 203647 en IEEE Electron Device Letters © 2017 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Apparent Mean Free Path
Apparent Mobility
spellingShingle Apparent Mean Free Path
Apparent Mobility
Ajaykumar, Arjun
Zhou, Xing
Chiah, Siau Ben
A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
description The operating regime of MOS transistors shifts from collision-dominated drift-diffusion (DD) to less-collision quasi-ballistic(QB) regime. The impact of transport mechanism on the low-frequency noise (LFN) is not well studied for QB devices. Most of the studies rely on the existing theories that were developed for DD-based devices to study LFN even in nanoscale regime. Validity of these models is questionable. In this letter, we extend the conventional carrier-number and correlated-mobility fluctuation model to the QB regime. The model is in accordance with the “apparent mean free path” (λapp) model, which predicts scattering limited noise mechanism in the QB regime. The model is validated with LFN measurement data for III-V QB devices, and shows good agreement with the expected behavior.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ajaykumar, Arjun
Zhou, Xing
Chiah, Siau Ben
format Article
author Ajaykumar, Arjun
Zhou, Xing
Chiah, Siau Ben
author_sort Ajaykumar, Arjun
title A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
title_short A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
title_full A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
title_fullStr A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
title_full_unstemmed A New Interpretation for the Anomalous Channel-Length Dependence of Low-Frequency Noise in Quasi-Ballistic Transistors
title_sort new interpretation for the anomalous channel-length dependence of low-frequency noise in quasi-ballistic transistors
publishDate 2018
url https://hdl.handle.net/10356/88179
http://hdl.handle.net/10220/44601
_version_ 1681040957313646592

Similar Items