Defect-induced tunable permittivity of epsilon-near-zero in indium tin oxide thin films

• Main Authors: Lian, Jiqing, Zhang, Dawei, Hong, Ruijin, Qiu, Peizhen, Lv, Taiguo, Zhang, Daohua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Epsilon-Near-Zero; DRNTU::Engineering::Electrical and electronic engineering; ITO Thin Films
• Online Access: https://hdl.handle.net/10356/88830; http://hdl.handle.net/10220/46977
• Institution: Nanyang Technological University

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulati...